By Peter A. Jansson
The Literature on deconvolution is wealthy with the contributions of many investigations. those contributions are, in spite of the fact that, scattered between journals dedicated to quite a few specialties. No unmarried quantity has been on hand that offers either an summary and aspect wanted by way of a newcomer to this box.
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Additional info for Deconvolution: With Applications in Spectroscopy
KGaA. j 2 Ion Source and Vacuum Chamber. Influence of Various Effects on Ion Beam Parameters 30 2) 3) 4) 5) 6) 7) 8) comparison with nominal ones, without additional mass ﬂow; insufﬁcient pumping also develops dangerous oscillations and instabilities (discussed in Chapter 3). Charge-exchange effects that are important at high test facility background pressures. Presence of doubly ionized particles and their impact on ion beam energy. Impact of the vacuum chamber pumping rate on maintaining a normal range of operation parameters.
V. (March 11 2008) Fluid-Cooled Ion Source, US Patent No. 7,342,236. V. (November 2009) Industrial Gridless Broad Beam Ion Sources and the Need for Their Standardization. Part 4B. Hall-Current Ion Sources, Problems and Solutions. Standardization of Ion Sources, Vacuum Technology & Coating, pp. 40–49. Klyuev, V. (October 2009) Private Communication. V. (June 15 2004) HallCurrent Ion Source, US Patent 6,750,600. I. (1973) On equilibrium and 18 19 20 21 22 23 stability of ﬂows in accelerators with closed electron drift and extended acceleration zone, in Plasma Accelerators, collection of papers from the 1st All-Union Conference on Plasma Accelerators, Maschinostroenie, Moscow, p.
As a rule, excessive entrainment increases the ion beam current and in some cases smears the ion energy distribution and in unexpected higher ion beam current values. Therefore, in order to provide conﬁdent operational characteristics, it is desirable to have background pressures with minimum entrainment effects. The background gas entrainment is considered the result of a random ﬂux of background gas molecules through the ion source exit end side. 2 Mass Entrainment during an ion source operation there is the free molecular ﬂow condition (which is in fact true for practically all ion sources), the background gas ﬂow can be modeled by the following equation : W ¼ ð1=4Þnb ð8 kT=pmÞ1=2 ¼ P=ð2pmkTÞ1=2 ð2:3Þ where W is a random particle ﬂux across an ion source end-side surface; nb is a background gas number density; m is a background gas molecular mass; T is a background gas temperature; P ¼ nbkT is a background gas pressure.